Semiconductor device under bump structure and method therefor

ABSTRACT

A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.

BACKGROUND Field

This disclosure relates generally to semiconductor device packaging, andmore specifically, to a semiconductor device under bump structure andmethod of forming the same.

Related Art

Today, the electronics industry continues to rely upon advances insemiconductor technology to realize higher-function devices in morecompact areas. For many applications realizing higher-functioningdevices requires integrating a large number of electronic devices into asingle silicon wafer. As the number of electronic devices per given areaof the silicon wafer increases, the manufacturing process becomes moredifficult.

The packaging of an IC device is increasingly playing a role in itsultimate performance. For example, WLCSP components are used in theassembly of mobile devices (e.g., mobile phones, tablet computers,laptop computers, remote controls, etc.), WLCSP components save valuablespace in mobile applications.

During manufacturing, WLCSP devices may be subjected to a number ofprocesses which may affect manufacturing cost, product yield and productreliability. The yield has a direct bearing on the cost of the finishedmobile product. The reliability affects the longevity of the finishedmobile product.

There is a need for a WLCSP assembly process which can address thechallenges raised by the needs of mobile applications, for example.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and is notlimited by the accompanying figures, in which like references indicatesimilar elements. Elements in the figures are illustrated for simplicityand clarity and have not necessarily been drawn to scale.

FIG. 1 illustrates, in a simplified plan view, an example semiconductordevice having an under bump structure in accordance with an embodiment.

FIG. 2 through FIG. 6 illustrate, in simplified cross-sectional views,the example semiconductor device taken along line A-A of FIG. 1 atstages of manufacture in accordance with an embodiment.

FIG. 7 illustrates, in a simplified plan view, an alternative examplesemiconductor device having an under bump structure in accordance withan embodiment.

FIG. 8 illustrates, in a simplified cross-sectional view, the examplesemiconductor device taken along line B-B of FIG. 7 at a stage ofmanufacture in accordance with an embodiment.

DETAILED DESCRIPTION

Generally, there is provided, a low cost semiconductor device packagingwith under bump structure. The under bump structure is formed utilizingthe redistribution layer of a wafer level chip scale packaging (WLCSP),for example. A cavity formed in a non-conductive layer formed over thesemiconductor device serves as a basis for the under bump structure. Theredistribution layer is formed over the non-conductive layer, includingthe cavity, and provides interconnect traces from a bond pad of thesemiconductor device to the under bump structure. The redistributionlayer portion over the cavity serves as a “socket” of the under bumpstructure configured for placement and attachment of a solder ball, forexample. By utilizing the redistribution layer to form the under bumpstructure, a simplified WLCSP structure is formed, and manufacturingcosts may be significantly reduced.

FIG. 1 illustrates, in a simplified plan view, a portion of an examplesemiconductor device 100 having an under bump structure in accordancewith an embodiment. The device 100 includes a semiconductor die 102, anon-conductive layer (not shown) formed over the final passivation ofthe semiconductor die, and a conductive (e.g., copper) layer 106 formedover the non-conductive layer. In this embodiment, the conductive layer106 is patterned to form a conductive portion of the under bumpstructure and interconnect to a bond pad 104 of the semiconductor die102. In this embodiment, the conductive layer 106 may be characterizedas a redistribution layer (RDL). A conductive ball connector 108 isplaced and affixed to the conductive portion of the under bumpstructure. Detailed features of the device 100 such as a packageencapsulant are not shown for illustration purposes. Even though theembodiment of FIG. 1 is depicted in a “fan-in” configuration,embodiments in other configurations (e.g., “fan-out”) are anticipated bythis disclosure. Cross-sectional views of the example semiconductordevice 100 taken along line A-A of FIG. 1 at stages of manufacture aredepicted in FIG. 2 through FIG. 6 .

The semiconductor die 102 has an active side (e.g., major side havingcircuitry) and a backside (e.g., major side opposite of the activeside). The semiconductor die 102 depicted in FIG. 1 is in an active sideup orientation. The semiconductor die 102 includes bond pads 104 at theactive side configured for connection to printed circuit board (PCB) byway of the conductive layer 106 and the under bump structure, forexample. The semiconductor die 102 may be formed from any suitablesemiconductor material, such as silicon, germanium, gallium arsenide,gallium nitride, silicon nitride, silicon carbide, and the like. Thesemiconductor die 102 may further include any digital circuits, analogcircuits, RF circuits, memory, signal processor, MEMS, sensors, thelike, and combinations thereof. The conductive ball connectors (e.g.,solder balls) 108 affixed to the conductive portions of the under bumpstructures of device 100 may be in the form of suitable conductivestructures such as solder balls, gold studs, copper pillars, and thelike.

FIG. 2 through FIG. 6 illustrate, in simplified cross-sectional views, aportion 200 of the example semiconductor device 100 taken along line A-Aof FIG. 1 at stages of manufacture in accordance with an embodiment.

FIG. 2 illustrates the example semiconductor device portion 200 at astage of manufacture in accordance with an embodiment. At this stage ofmanufacture, a semiconductor die 210 is provided. In this embodiment,the semiconductor die 210 includes a substrate 202, a conductiveinterconnect trace 206 (e.g., copper, aluminum, or other suitablemetal), a bond pad 204 conductively connected to the trace, and a finalpassivation layer 208 formed over the active side of the die. In someembodiments, the semiconductor die 210 may be provided as a wafer orportion of a wafer. The semiconductor die may include any number ofconductive interconnect layers and passivation layers. For illustrationpurposes, a top interconnect layer forming trace 206 and a finalpassivation layer 208 are depicted.

FIG. 3 illustrates the example semiconductor device portion 200 at asubsequent stage of manufacture in accordance with an embodiment. Atthis stage of manufacture, a non-conductive layer 302 is formed over thesemiconductor die 210. The non-conductive layer 302 is deposited orotherwise applied on the top surface of the semiconductor die 210. Thenon-conductive 302 layer may be formed from a photo-imageable polymermaterial characterized as a photosensitive solder mask material layer ormolding compound material. In this embodiment, an opening 304 and acavity 306 are patterned and formed in the non-conductive layer. In thisembodiment, the opening 304 may be formed using known masking andexposure techniques whereas the cavity 306 may be formed using knownmask lensing exposure techniques to limit the depth of the cavity, forexample.

The opening 304 is formed through the non-conductive layer 302 andlocated over the bond pad 204 such that a substantial portion of a topsurface of the bond pad 204 is exposed. Sidewalls 312 of the opening 304surround the exposed portion of the bond pad 204. The cavity 306 isformed at a top surface 308 of the non-conductive layer 302 and locatedover the semiconductor die 210. The cavity 306 includes sidewalls 314and a bottom surface 316. A portion of the non-conductive layer 302remains between the bottom surface 316 of the cavity and a bottomsurface 310 of the non-conductive layer. The portion of the of thenon-conductive layer 302 between the cavity bottom surface 316 and thenon-conductive layer bottom surface 310 is configured to have apredetermined thickness 318. In this embodiment, the predeterminedthickness is approximately 2 microns or greater. In this embodiment, thecavity 306 serves as a basis for an under bump structure 320.

FIG. 4 illustrates the example semiconductor device portion 200 at asubsequent stage of manufacture in accordance with an embodiment. Atthis stage of manufacture, a seed layer 402 is formed over thenon-conductive layer 302 and exposed portion of the bond pad 204. Theseed layer 402 is formed as a relatively thin layer and may includetitanium, tungsten, palladium, copper, or suitable combinations thereofconducive for plating or metallization, for example. The seed layer 402may also serve as a barrier layer to avoid diffusion into the bond pad204 and enhance adhesion to underlying non-conductive layer 302.

FIG. 5 illustrates the example semiconductor device portion 200 at asubsequent stage of manufacture in accordance with an embodiment. Atthis stage of manufacture, a conductive layer 502 is formed on seedlayer 402. In this embodiment, the conductive layer 502 includes copperand is formed by utilizing the seed layer 402 in a copper platingprocess. The copper plating process may be characterized as anelectroless process or an electroplating process. The conductive layer502 forms a conformal conductive layer over the exposed pad region aswell as the cavity 306 of the under bump structure 320. The conductivelayer 502 is patterned and configured to interconnect the bond pad 204with the conductive layer portion over the cavity 302 of the under bumpstructure 320. In this embodiment, the conductive layer 502 may becharacterized as a redistribution layer (RDL).

FIG. 6 illustrates the example semiconductor device portion 200 at asubsequent stage of manufacture in accordance with an embodiment. Atthis stage of manufacture, a conductive ball connector 602 (e.g., solderball) is attached to the under bump structure 320. The conductive ballconnector 602 is placed onto the cavity of the under bump structure 320and reflowed. A flux material may be placed in the cavity before placingthe conductive ball connector 602 onto the under bump structure 320 toimprove wetting and adhesion. In this embodiment, the conductive ballconnector 602 is formed as a solder ball. In other embodiments, theconductive ball connector 602 may be formed as a solder bump, gold stud,copper pillar, or the like. After attaching the conductive ballconnector 602 to the under bump structure 602, an anti-tarnish orpreservative material 604 may be applied over exposed portions of theconductive layer 502. The anti-tarnish or preservative material 604 maybond with the conductive layer 502 in a manner that protects exposedsurfaces of the conductive layer 502 from oxidation or corrosion, forexample.

FIG. 7 illustrates, in a simplified plan view, a portion of analternative example semiconductor device 700 having an under bumpstructure in accordance with an embodiment. In this embodiment, thedevice 700 is depicted in a “fan-out” configuration having the underbump structure formed over a package encapsulant 710. The device 700includes a semiconductor die 702, a non-conductive layer (not shown)formed over the final passivation of the semiconductor die, a conductive(e.g., copper) layer 706 formed over the non-conductive layer, and theencapsulant 710 encapsulating a portion of the semiconductor die 702. Inthis embodiment, the conductive layer 706 is patterned to form aconductive portion of the under bump structure and interconnect to abond pad 704 of the semiconductor die 702. In this embodiment, theconductive layer 706 may be characterized as a redistribution layer(RDL). A conductive ball connector 708 is placed and affixed to theconductive portion of the under bump structure. A cross-sectional viewof the example semiconductor device 700 taken along line B-B of FIG. 7at a stage of manufacture is depicted in FIG. 8 .

The semiconductor die 702 has an active side (e.g., major side havingcircuitry) and a backside (e.g., major side opposite of the activeside). The semiconductor die 702 depicted in FIG. 7 is encapsulated within an exposed active side up orientation. The semiconductor die 702includes bond pads 704 at the active side configured for connection toprinted circuit board (PCB) by way of the conductive layer 706 and theunder bump structure, for example. The semiconductor die 702 may beformed from any suitable semiconductor material, such as silicon,germanium, gallium arsenide, gallium nitride, silicon nitride, siliconcarbide, and the like. The semiconductor die 702 may further include anydigital circuits, analog circuits, RF circuits, memory, signalprocessor, MEMS, sensors, the like, and combinations thereof. Theconductive ball connectors (e.g., solder balls) 708 affixed to theconductive portions of the under bump structures of device 700 may be inthe form of suitable conductive structures such as solder balls, goldstuds, copper pillars, and the like.

FIG. 8 illustrates, in a simplified cross-sectional view, a portion 800of the example semiconductor device 700 taken along line B-B of FIG. 7at a stage of manufacture in accordance with an embodiment. At thisstage of manufacture, a semiconductor die 810 partially encapsulatedwith an encapsulant 812 is provided. The active surface of thesemiconductor die 810 is exposed (e.g., not encapsulated). Thesemiconductor die 810 includes a substrate 802, a conductiveinterconnect trace 806 (e.g., copper, aluminum, or other suitablemetal), a bond pad 804 conductively connected to the trace, and a finalpassivation layer 808 formed over the active side of the die.

A non-conductive layer 814 is formed over the semiconductor die 810 andencapsulant 812. The non-conductive 814 layer may be formed from aphoto-imageable polymer material characterized as a photosensitivesolder mask material layer or a molding compound material. In thisembodiment, an opening and a cavity are patterned and formed in thenon-conductive layer 814. The opening is formed through thenon-conductive layer 814 and located over the bond pad 804. The cavityis formed at a top surface of the non-conductive layer 814 and locatedover the encapsulant 812. A portion of the non-conductive layer 814remains between a bottom surface of the cavity and a bottom surface ofthe non-conductive layer. In this embodiment, the cavity serves as abasis for an under bump structure 824.

A seed layer 816 is formed over the non-conductive layer 814 and exposedportion of the bond pad 804. The seed layer 816 is formed as arelatively thin layer and may include titanium, tungsten, palladium,copper, or suitable combinations thereof conducive for plating ormetallization, for example. A conductive layer 818 (e.g., copper) isformed by utilizing the seed layer 816 in a plating process. Theconductive layer 818 forms a conformal conductive layer over the exposedpad region as well as the cavity of the under bump structure 824. Theconductive layer 818 is patterned and configured to interconnect thebond pad 804 with the conductive layer portion over the cavity of theunder bump structure 824. In this embodiment, the conductive layer 818may be characterized as a redistribution layer (RDL).

A conductive ball connector 820 (e.g., solder ball) is attached to theunder bump structure 824. The conductive ball connector 820 is placedonto the cavity of the under bump structure 824 and reflowed. In thisembodiment, the conductive ball connector 820 is formed as a solderball. In other embodiments, the conductive ball connector 820 may beformed as a solder bump, gold stud, copper pillar, or the like. Afterattaching the conductive ball connector 820 to the under bump structure824, an anti-tarnish or preservative material 822 may be applied overexposed portions of the conductive layer 818. The anti-tarnish orpreservative material 822 may bond with the conductive layer 818 in amanner that protects exposed surfaces of the conductive layer 818 fromoxidation or corrosion, for example.

Generally, there is provided, a method including depositing anon-conductive layer over a semiconductor die; forming an opening in thenon-conductive layer, the opening exposing a portion of a bond pad ofthe semiconductor die; forming a cavity in the non-conductive layer, aportion of the non-conductive layer remaining between a bottom surfaceof the cavity and a bottom surface of the non-conductive layer; andforming a conductive layer over the non-conductive layer and the portionof the bond pad, the conductive layer configured to interconnect thebond pad with a conductive layer portion over the cavity. Thenon-conductive layer may be formed directly on a passivation layer ofthe semiconductor die. The method may further include forming a seedlayer over the non-conductive layer and the exposed portion of the bondpad before forming the conductive layer. The conductive layer portionover the cavity may be configured for attachment of a ball connector.The non-conductive layer may be characterized as a photosensitive soldermask material layer or a molding compound material layer. The cavity maybe formed in a portion of the non-conductive layer located over thesemiconductor die. The cavity may be formed in a portion of thenon-conductive layer located over a package encapsulant. The portion ofthe non-conductive layer remaining between the bottom surface of thecavity and the bottom surface of the non-conductive layer may have athickness of approximately 2 microns or greater. The method may furtherinclude forming a protectant layer over at least exposed portions of theconductive layer.

In another embodiment, there is provided, a semiconductor deviceincluding a semiconductor die having a passivation layer, an opening inthe passivation layer exposing a portion of a top surface of a bond pad;a non-conductive layer formed over the semiconductor die; an openingformed through the non-conductive layer exposing the portion of the topsurface of the bond pad; a cavity formed in a top surface of thenon-conductive layer, a portion of the non-conductive layer remainingbetween a bottom surface of the cavity and a bottom surface of thenon-conductive layer; and a conductive layer formed over thenon-conductive layer and the portion of the top surface of the bond pad,the conductive layer patterned and configured to interconnect the bondpad with a conductive layer portion over the cavity. The conductivelayer portion over the cavity may be configured for attachment of a ballconnector. The non-conductive layer may be characterized as a layercomprising a photosensitive solder mask material or a molding compoundmaterial layer. The semiconductor device may further include aprotectant layer formed over at least exposed portions of the conductivelayer. The semiconductor device may further include a seed layer formedon the non-conductive layer and the exposed surface of the bond pad, theconductive layer plated on the seed layer. The cavity formed in the topsurface of the non-conductive layer may be located over thesemiconductor die.

In yet another embodiment, there is provided, a method includingdepositing a non-conductive layer over a semiconductor die; forming anopening through the non-conductive layer, the opening exposing a portionof a top surface of a bond pad of the semiconductor die; forming acavity in the non-conductive layer, a portion of the non-conductivelayer remaining between a bottom surface of the cavity and a bottomsurface of the non-conductive layer; forming a conductive layer over thenon-conductive layer and the portion of the top surface of the bond pad;and patterning the conductive layer to interconnect the bond pad with aportion of the conductive layer formed over the cavity. Thenon-conductive layer may be formed directly on a passivation layer ofthe semiconductor die. The portion of the conductive layer formed overthe cavity may be configured for attachment of a ball connector. Themethod may further include forming a seed layer over the non-conductivelayer and the exposed surface of the bond pad before forming theconductive layer. The cavity may be formed in a portion of thenon-conductive layer located over a package encapsulant.

By now, it should be appreciated that there has been provided a low costsemiconductor device packaging with under bump structure. The under bumpstructure is formed utilizing the redistribution layer of a wafer levelchip scale packaging (WLCSP), for example. A cavity formed in anon-conductive layer formed over the semiconductor device serves as abasis for the under bump structure. The redistribution layer is formedover the non-conductive layer, including the cavity, and providesinterconnect traces from a bond pad of the semiconductor device to theunder bump structure. The redistribution layer portion over the cavityserves as a “socket” of the under bump structure configured forplacement and attachment of a solder ball, for example. By utilizing theredistribution layer to form the under bump structure, a simplifiedWLCSP structure is formed, and manufacturing costs may be significantlyreduced.

The terms “front,” “back,” “top,” “bottom,” “over,” “under” and the likein the description and in the claims, if any, are used for descriptivepurposes and not necessarily for describing permanent relativepositions. It is understood that the terms so used are interchangeableunder appropriate circumstances such that the embodiments of theinvention described herein are, for example, capable of operation inother orientations than those illustrated or otherwise described herein.

Although the invention is described herein with reference to specificembodiments, various modifications and changes can be made withoutdeparting from the scope of the present invention as set forth in theclaims below. Accordingly, the specification and figures are to beregarded in an illustrative rather than a restrictive sense, and allsuch modifications are intended to be included within the scope of thepresent invention. Any benefits, advantages, or solutions to problemsthat are described herein with regard to specific embodiments are notintended to be construed as a critical, required, or essential featureor element of any or all the claims.

Furthermore, the terms “a” or “an,” as used herein, are defined as oneor more than one. Also, the use of introductory phrases such as “atleast one” and “one or more” in the claims should not be construed toimply that the introduction of another claim element by the indefinitearticles “a” or “an” limits any particular claim containing suchintroduced claim element to inventions containing only one such element,even when the same claim includes the introductory phrases “one or more”or “at least one” and indefinite articles such as “a” or “an.” The sameholds true for the use of definite articles.

Unless stated otherwise, terms such as “first” and “second” are used toarbitrarily distinguish between the elements such terms describe. Thus,these terms are not necessarily intended to indicate temporal or otherprioritization of such elements.

What is claimed is: 1-9. (canceled)
 10. A semiconductor devicecomprising: a semiconductor die having a passivation layer, an openingin the passivation layer exposing a portion of a top surface of a bondpad; a non-conductive layer formed over the semiconductor die; anopening formed through the non-conductive layer exposing the portion ofthe top surface of the bond pad; a cavity formed in a top surface of thenon-conductive layer, a portion of the non-conductive layer remainingbetween a bottom surface of the cavity and a bottom surface of thenon-conductive layer; and a conductive layer formed over thenon-conductive layer and the portion of the top surface of the bond pad,the conductive layer patterned and configured to interconnect the bondpad with a conductive layer portion over the cavity.
 11. Thesemiconductor device of claim 10, wherein the conductive layer portionover the cavity is configured for attachment of a ball connector. 12.The semiconductor device of claim 10, wherein the non-conductive layeris characterized as a layer comprising a photosensitive solder maskmaterial or a molding compound material layer.
 13. The semiconductordevice of claim 10, further comprising a protectant layer formed over atleast exposed portions of the conductive layer.
 14. The semiconductordevice of claim 10, further comprising a seed layer formed on thenon-conductive layer and the exposed surface of the bond pad, theconductive layer plated on the seed layer.
 15. The semiconductor deviceof claim 10, wherein the cavity formed in the top surface of thenon-conductive layer is located over the semiconductor die. 16-20.(canceled)
 21. A semiconductor device comprising: a semiconductor diehaving a passivation layer, an opening in the passivation layer exposinga portion of a top surface of a bond pad; a non-conductive layer formedover the semiconductor die; an opening formed through the non-conductivelayer exposing the portion of the top surface of the bond pad; a cavityformed in a top surface of the non-conductive layer, a portion of thenon-conductive layer remaining between a bottom surface of the cavityand a bottom surface of the non-conductive layer; and a conductive layerformed over the non-conductive layer and the portion of the top surfaceof the bond pad, the conductive layer configured to interconnect thebond pad with a conductive layer portion over the cavity, the conductivelayer conformal with the cavity to form a recess in the conductive layerportion within sidewalls of the cavity.
 22. The semiconductor device ofclaim 21, wherein the recess in the conductive layer portion over thecavity is configured for attachment of a ball connector, and wherein theball connector occupies the recess in the conductive layer portion. 23.The semiconductor device of claim 21, wherein the non-conductive layeris characterized as a layer comprising a photosensitive solder maskmaterial or a molding compound material layer.
 24. The semiconductordevice of claim 21, further comprising a protectant layer formed over atleast exposed portions of the conductive layer.
 25. The semiconductordevice of claim 21, further comprising a seed layer formed on thenon-conductive layer and the exposed surface of the bond pad, theconductive layer plated on the seed layer.
 26. The semiconductor deviceof claim 21, wherein the cavity formed in the top surface of thenon-conductive layer is located over the semiconductor die.
 27. Thesemiconductor device of claim 21, wherein the cavity formed in the topsurface of the non-conductive layer is located over a packageencapsulant.
 28. The semiconductor device of claim 21, wherein thenon-conductive layer is formed directly on the passivation layer of thesemiconductor die.
 29. A semiconductor device comprising: asemiconductor die having a passivation layer, an opening in thepassivation layer exposing a portion of a top surface of a bond pad; anon-conductive layer formed over the semiconductor die, an openingformed through the non-conductive layer exposing the portion of the topsurface of the bond pad; a cavity formed in a top surface of thenon-conductive layer, a portion of the non-conductive layer remainingbetween a bottom surface of the cavity and a bottom surface of thenon-conductive layer; and a conductive layer formed over thenon-conductive layer and the portion of the top surface of the bond pad,the conductive layer patterned and configured to interconnect the bondpad with a conductive layer portion over the cavity, the conductivelayer conformal with the cavity to form a recess in the conductive layerportion within sidewalls of the cavity.
 30. The semiconductor device ofclaim 29, wherein the recess in the conductive layer portion over thecavity is configured for attachment of a ball connector, and wherein theball connector occupies the recess in the conductive layer portion. 31.The semiconductor device of claim 29, wherein the non-conductive layeris characterized as a layer comprising a photosensitive solder maskmaterial or a molding compound material layer.
 32. The semiconductordevice of claim 29, further comprising a protectant layer formed over atleast exposed portions of the conductive layer.
 33. The semiconductordevice of claim 29, further comprising a seed layer formed on thenon-conductive layer and the exposed surface of the bond pad, theconductive layer plated on the seed layer.
 34. The semiconductor deviceof claim 29, wherein the cavity formed in the top surface of thenon-conductive layer is located over the semiconductor die.